| slovo | definícia |
bipolar
(encz) | bipolar,bipolární adj: |
bipolar
(encz) | bipolar,dvoupólový adj: Zdeněk Brož |
Bipolar
(gcide) | Bipolar \Bi*po"lar\, a. [Pref. bi- + polar. Cf. Dipolar.]
Doubly polar; having two poles; as, a bipolar cell or
corpuscle.
[1913 Webster] |
bipolar
(wn) | bipolar
adj 1: of or relating to manic depressive illness
2: of, pertaining to, or occurring in both polar regions; "the
bipolar distribution of certain species"
3: having two poles [ant: unipolar] |
bipolar
(foldoc) | bipolar
1. See bipolar transistor.
2. In digital transmission, an electrical
line signalling method where the mark value alternates between
positive and negative polarities.
See also AMI.
(1995-03-02)
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| | podobné slovo | definícia |
bipolar disorder
(encz) | bipolar disorder,manická deprese n: [med.] Pino |
bipolarity
(encz) | bipolarity,bipolarita n: Zdeněk Brož |
bipolar field effect transistor
(czen) | Bipolar Field Effect Transistor,BiFET[zkr.] [voj.] Zdeněk Brož a
automatický překlad |
bipolarita
(czen) | bipolarita,bipolarityn: Zdeněk Brož |
heterojunction bipolar transistor
(czen) | Heterojunction Bipolar Transistor,HBT[zkr.] [voj.] Zdeněk Brož a
automatický překlad |
insulated gate bipolar transistor
(czen) | Insulated Gate Bipolar Transistor,IGBT[zkr.] [voj.] Zdeněk Brož a
automatický překlad |
Bipolar
(gcide) | Bipolar \Bi*po"lar\, a. [Pref. bi- + polar. Cf. Dipolar.]
Doubly polar; having two poles; as, a bipolar cell or
corpuscle.
[1913 Webster] |
Bipolarity
(gcide) | Bipolarity \Bi`po*lar"i*ty\, n.
Bipolar quality.
[1913 Webster] Bipont |
bipolar disorder
(wn) | bipolar disorder
n 1: a mental disorder characterized by episodes of mania and
depression [syn: bipolar disorder, manic depression,
manic depressive illness, manic-depressive psychosis] |
bipolar transistor
(foldoc) | bipolar transistor
A transistor made from a sandwich of n- and
p-type semiconductor material: either npn or pnp. The
middle section is known as the "base" and the other two as the
"collector" and "emitter". When used as an amplifying
element, the base to emitter junction is in a "forward-biased"
(conducting) condition, and the base to collector junction is
"reverse-biased" or non-conducting. Small changes in the base
to emitter current (the input signal) cause either holes
(for pnp devices) or free electrons (for npn) to enter the
base from the emitter. The attracting voltage of the
collector causes the majority of these charges to cross into
and be collected by the collector, resulting in amplification.
Contrast field effect transistor.
(1995-10-04)
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