| slovo | definícia |
transistor
(encz) | transistor,tranzistor n: [el.] petr.adamek@bilysklep.cz |
transistor
(encz) | transistor,tranzistorový adj: [el.] petr.adamek@bilysklep.cz |
Transistor
(gcide) | Transistor \Trans*ist"or\, n. [transfer + resistor, from its
ability to tranfer a current across a resistor.]
(Electronics)
a component used in electronic devices consisting of three
regions of at least two types of a semiconducting material,
such as doped silicon, connected to each other and to three
electrodes in a conducting path so as to modify the current
or voltage in an electronic circuit.
Note: Transistors are used in almost all modern electronic
devices, having replaced the vacuum tube in most
applications. Since they are based on the electronic
characteristics of solids, they are called solid-state
devices. Typically a transistor is composed of p, n,
and p-type semiconductors in series, or of n, p, and n,
with the center region being a thin layer between the
two outer regions. An electronic signal input to the
central layer may be substantially amplified by such a
device. In integrated circuits, many thousands of
transistors may be etched into a single small wafer of
silicon.
[PJC] |
transistor
(wn) | transistor
n 1: a semiconductor device capable of amplification [syn:
transistor, junction transistor, {electronic
transistor}] |
transistor
(foldoc) | transistor
A three terminal semiconductor amplifying
device, the fundamental component of most active electronic
circuits, including digital electronics. The transistor was
invented on 1947-12-23 at Bell Labs.
There are two kinds, the bipolar transistor (also called the
junction transistor), and the field effect transistor (FET).
Transistors and other components are interconnected to make
complex integrated circuits such as logic gates,
microprocessors and memory.
(1995-10-05)
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| | podobné slovo | definícia |
electronic transistor
(encz) | electronic transistor, n: |
field-effect transistor
(encz) | field-effect transistor, n: |
junction transistor
(encz) | junction transistor, n: |
p-n-p transistor
(encz) | p-n-p transistor,pnp tranzistor [el.] parkmaj |
transistor radio
(encz) | transistor radio,tranzistorové rádio Zdeněk Brož |
transistorise
(encz) | transistorise, v: |
transistorised
(encz) | transistorised, |
transistorize
(encz) | transistorize,opatřit tranzistory Zdeněk Brož |
transistorized
(encz) | transistorized,tranzistorový adj: Zdeněk Brož |
transistorizing
(encz) | transistorizing, |
transistors
(encz) | transistors,tranzistory n: pl. Zdeněk Brož |
bipolar field effect transistor
(czen) | Bipolar Field Effect Transistor,BiFET[zkr.] [voj.] Zdeněk Brož a
automatický překlad |
complementary heterostructure field effect transistor
(czen) | Complementary Heterostructure Field Effect Transistor,C-HFET[zkr.]
[voj.] Zdeněk Brož a automatický překlad |
heterojunction bipolar transistor
(czen) | Heterojunction Bipolar Transistor,HBT[zkr.] [voj.] Zdeněk Brož a
automatický překlad |
high electron mobility transistor
(czen) | High Electron Mobility Transistor,HEMT[zkr.] [voj.] Zdeněk Brož a
automatický překlad |
insulated gate bipolar transistor
(czen) | Insulated Gate Bipolar Transistor,IGBT[zkr.] [voj.] Zdeněk Brož a
automatický překlad |
metal-oxide-semiconductor controlled transistor
(czen) | Metal-Oxide-Semiconductor Controlled Transistor,MCT[zkr.] [voj.] Zdeněk
Brož a automatický překlad |
Transistor
(gcide) | Transistor \Trans*ist"or\, n. [transfer + resistor, from its
ability to tranfer a current across a resistor.]
(Electronics)
a component used in electronic devices consisting of three
regions of at least two types of a semiconducting material,
such as doped silicon, connected to each other and to three
electrodes in a conducting path so as to modify the current
or voltage in an electronic circuit.
Note: Transistors are used in almost all modern electronic
devices, having replaced the vacuum tube in most
applications. Since they are based on the electronic
characteristics of solids, they are called solid-state
devices. Typically a transistor is composed of p, n,
and p-type semiconductors in series, or of n, p, and n,
with the center region being a thin layer between the
two outer regions. An electronic signal input to the
central layer may be substantially amplified by such a
device. In integrated circuits, many thousands of
transistors may be etched into a single small wafer of
silicon.
[PJC] |
electronic transistor
(wn) | electronic transistor
n 1: a semiconductor device capable of amplification [syn:
transistor, junction transistor, {electronic
transistor}] |
field-effect transistor
(wn) | field-effect transistor
n 1: a transistor in which most current flows in a channel whose
effective resistance can be controlled by a transverse
electric field [syn: field-effect transistor, FET] |
junction transistor
(wn) | junction transistor
n 1: a semiconductor device capable of amplification [syn:
transistor, junction transistor, {electronic
transistor}] |
p-n-p transistor
(wn) | p-n-p transistor
n 1: a junction transistor having an n-type semiconductor
between a p-type semiconductor that serves as an emitter
and a p-type semiconductor that serves as a collector |
transistorise
(wn) | transistorise
v 1: equip (an electronic circuit or device) with transistors
[syn: transistorize, transistorise] |
transistorised
(wn) | transistorised
adj 1: (of an electronic device) equipped with transistors [syn:
transistorized, transistorised] |
transistorize
(wn) | transistorize
v 1: equip (an electronic circuit or device) with transistors
[syn: transistorize, transistorise] |
transistorized
(wn) | transistorized
adj 1: (of an electronic device) equipped with transistors [syn:
transistorized, transistorised] |
bipolar transistor
(foldoc) | bipolar transistor
A transistor made from a sandwich of n- and
p-type semiconductor material: either npn or pnp. The
middle section is known as the "base" and the other two as the
"collector" and "emitter". When used as an amplifying
element, the base to emitter junction is in a "forward-biased"
(conducting) condition, and the base to collector junction is
"reverse-biased" or non-conducting. Small changes in the base
to emitter current (the input signal) cause either holes
(for pnp devices) or free electrons (for npn) to enter the
base from the emitter. The attracting voltage of the
collector causes the majority of these charges to cross into
and be collected by the collector, resulting in amplification.
Contrast field effect transistor.
(1995-10-04)
|
field effect transistor
(foldoc) | field effect transistor
(FET) A transistor with a region of donor
material with two terminals called the "source" and the
"drain", and an adjoining region of acceptor material
between, called the "gate". The voltage between the gate and
the substrate controls the current flow between source and
drain by depleting the donor region of its charge carriers to
greater or lesser extent.
There are two kinds of FET's, Junction FETs and MOSFETs.
Because no current (except a minute leakage current) flows
through the gate, FETs can be used to make circuits with very
low power consumption.
Contrast bipolar transistor.
(1995-10-05)
|
junction field effect transistor
(foldoc) | Junction Field Effect Transistor
JFET
Junction FET
(JFET, Junction FET) A Field Effect Transistor
in which the conducting channel lies between pn junctions in
the silicon material. A pn junction acts as a diode, so it
becomes conductive if the gate voltage gets reversed.
(1997-02-24)
|
metal oxide semiconductor field effect transistor
(foldoc) | Metal Oxide Semiconductor Field Effect Transistor
(MOSFET) A Field Effect Transistor in which
the conducting channel is insulated from the gate terminal by
a layer of oxide. Therefore it does not conduct even if a
reverse voltage is applied to the gate.
(1997-02-24)
|
single-electron transistor
(foldoc) | quantum dot
single-electron transistor
(Or "single-electron transistor") A location capable
of containing a single electrical charge; i.e., a single
electron of Coulomb charge. Physically, quantum dots are
nanometer-size semiconductor structures in which the
presence or absence of a quantum electron can be used to store
information.
See also: quantum cell, quantum cell wire, {quantum-dot
cellular automata}.
(http://www-mtl.mit.edu/MTL/bulletin/v6n2/Kumar.html).
["Quantum Dot Heterostructures", D. Bimberg, et al, John
Wiley & Sons Ltd., Dec 1998].
(2001-07-17)
|
transistor-transistor logic
(foldoc) | Transistor-Transistor Logic
(TTL) A common semiconductor technology for building discrete
digital logic integrated circuits. It originated from {Texas
Instruments} in 1965.
There have been several series of TTL logic:
7400: 10 ns propagation time, 10 mW/gate power consumption,
obsolete;
74L00: Low power: higher resistances, less dissipation
(1 mW), longer propagation time (30 ns);
74H00: High power: lower resistances, more dissipation: less
sensitivity for noise;
74S00: Schottky-clamped: faster switching (3 ns, 19 mW) by
using Schottky diodes to prevent the transistors from
saturation;
74LS00: Low power, Schottky-clamped (10 ns, 2 mW);
74AS00: Advanced Schottky: faster switching, less
dissipation, (1.5 ns, 10 mW);
74ALS00: Advanced Low power Schottky (4 ns, 1.3 mW).
For each 74xxx family there is a corresponding 54xxx family.
The 74 series are specified for operation at 0 - 70 C whereas
the 54 (military) series can operate at -55 - 125 C
See also CMOS, ECL.
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